Triple-Layering Technology for Pixel-Parallel CMOS Image Sensors Developed by Hybrid Bonding of SOI Wafers.
Masahide GotoJoeri De VosToshihisa WatabeKei HagiwaraMasakazu NanbaYoshinori IguchiEiji HigurashiYuki HondaTakuya SarayaMasaharu KobayashiHiroshi ToshiyoshiToshiro HiramotoPublished in: 3DIC (2019)
Keyphrases
- image sensor
- dynamic range
- low power
- sensor technology
- video camera
- hardware and software
- single chip
- cmos technology
- digital camera
- cmos image sensor
- solid state
- image processing algorithms
- imaging systems
- silicon on insulator
- metal oxide semiconductor
- motion blur
- wide dynamic range
- charge coupled device
- integrated circuit
- liquid crystal
- parallel processing
- multi view
- high speed
- low cost
- raw image
- high quality
- three dimensional