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Reliability of reverse properties of power semiconductor devices: : Influence of surface dielectric layer and its experimental verification.

Václav PapezB. KojeckýD. Sámal
Published in: Microelectron. J. (2008)
Keyphrases
  • experimental verification
  • silicon dioxide
  • semiconductor devices
  • three dimensional
  • d objects
  • low cost
  • optimal solution
  • surface reconstruction
  • electron beam