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Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET.
Nitish Kumar
Aakanksha Mishra
Ankur Gupta
Pushpapraj Singh
Published in:
Microelectron. J. (2024)
Keyphrases
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leakage current
silicon dioxide
low voltage
electrical properties
field effect transistors
high temperature
nano scale
power line
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low cost
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mathematical analysis