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Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control.
Nicolo Oliva
Emanuele A. Casu
Matteo Cavalleri
Adrian M. Ionescu
Published in:
ESSDERC (2018)
Keyphrases
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silicon dioxide
control system
real world
nano scale
control theory
wide range
multiple input
control problems
gate dielectrics
leakage current
high precision
case study
information retrieval
process control
optimal control
significantly enhanced
electrical properties
image sequences