Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies.
A. KerberPublished in: Microelectron. Reliab. (2016)
Keyphrases
- field effect transistors
- gate dielectrics
- metal oxide semiconductor
- high density
- steady state
- cmos technology
- semiconductor devices
- mathematical analysis
- chip design
- circuit design
- low cost
- gate insulator
- wide range
- high reliability
- highly correlated
- image sensor
- high speed
- high correlation
- strongly correlated
- integrated circuit
- low voltage
- single chip
- analog vlsi
- parallel processing
- equivalent circuit
- power consumption