NBTI reliability on high-k metal-gate SiGe transistor and circuit performances.
Jiann-Shiun YuanWen-Kuan YehShuyu ChenChia-Wei HsuPublished in: Microelectron. Reliab. (2011)
Keyphrases
- field effect transistors
- high speed
- steady state
- high density
- mathematical analysis
- wide range
- circuit design
- high precision
- cmos technology
- power dissipation
- high reliability
- neural network
- thin film
- integrated circuit
- low power
- parallel processing
- information systems
- reliability analysis
- analog circuits
- data sets
- silicon dioxide
- metal oxide semiconductor