Variability-driven formulation for simultaneous gate sizing and post-silicon tunability allocation.
Vishal KhandelwalAnkur SrivastavaPublished in: ISPD (2007)
Keyphrases
- silicon dioxide
- field effect transistors
- cmos technology
- resource allocation
- low cost
- high speed
- data driven
- low power
- high density
- mathematical analysis
- allocation problems
- optimal allocation
- allocation strategy
- power consumption
- multiple input
- probabilistic formulation
- allocation scheme
- special case
- parallel processing
- leakage current