The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors.
Yongguang XiaoMinghua TangJiancheng LiBo JiangJohn HePublished in: Microelectron. Reliab. (2012)
Keyphrases
- field effect transistors
- schottky barrier
- high density
- steady state
- transmission line
- main factors
- mathematical analysis
- positive and negative
- high frequency
- semiconductor devices
- high speed
- physical characteristics
- user interface
- silicon dioxide
- low power
- user friendly
- power grid
- interface design
- real time
- multi layer
- human computer interaction