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Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications.
Shraddha Kothari
Chandan Joishi
Dhirendra Vaidya
Hasan Nejad
Benjamin Colombeau
Swaroop Ganguly
Saurabh Lodha
Published in:
ESSDERC (2015)
Keyphrases
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field effect transistors
silicon nitride
silicon dioxide
high density
steady state
mathematical analysis
grain size
nano scale
thin film
modulation scheme
multiple input
ultra wideband
high temperature
case study
power consumption
cmos technology