Reducing Breakdown Voltage in a Bipolar Impact Ionization MOSFET (BI-MOS) using Gate-Source Underlap.

Akshay Balaji Sneh Saurabh

Published in: VLSI-SoC (2021)

Keyphrases

field effect transistors
steady state
high density
business intelligence
neural network
mathematical analysis
high voltage
silicon dioxide
dual channel
low cost
information technology
decision support
power system
machine translation
positive and negative
leakage current