Low Swing and Column Multiplexed Bitline Techniques for Low-Vmin, Noise-Tolerant, High-Density, 1R1W 8T-Bitcell SRAM in 10nm FinFET CMOS.
Jaydeep P. KulkarniAndres MalavasiCharles AugustineCarlos TokunagaJim TschanzMuhammad M. KhellahVivek DePublished in: VLSI Circuits (2020)