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Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors.
Stefano Aresu
Werner Kanert
Reinhard Pufall
Michael Goroll
Published in:
Microelectron. Reliab. (2007)
Keyphrases
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field effect transistors
electric field
positive and negative
high density
room temperature
power system
cmos technology
low cost
steady state
neural network
artificial neural networks
space charge
flip flops
metal oxide semiconductor