Login / Signup

Reliability of Wafer-Level Ultra-Thinning down to 3 µm using 20 nm-Node DRAMs.

Zhwen ChenYoung-Suk KimTadashi FukudaKoji SakuiTakayuki OhbaTatsuji KobayashiTakashi Obara
Published in: IRPS (2021)
Keyphrases
  • preprocessing
  • high speed
  • neural network
  • infrared
  • topological properties
  • individual level
  • reliability analysis
  • semiconductor manufacturing