A 32-nm Subthreshold 7T SRAM Bit Cell With Read Assist.
Shourya GuptaKirti GuptaNeeta PandeyPublished in: IEEE Trans. Very Large Scale Integr. Syst. (2017)
Keyphrases
- random access memory
- low voltage
- leakage current
- cmos technology
- embedded dram
- design considerations
- power consumption
- low power
- nm technology
- dynamic random access memory
- data transmission
- parallel processing
- microscopic images
- wireless sensor networks
- flash memory
- high speed
- low cost
- image analysis
- neural network
- real time