Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications.
Sukhrob AbdulazhanovQuang Huy LeDang Khoa HuynhMaximilian LedererYannick RaffelKai NiXunzhao YinThomas KämpfeGerald GerlachPublished in: ESSDERC (2023)
Keyphrases
- cmos technology
- low power
- low cost
- low voltage
- leakage current
- silicon on insulator
- spl times
- parallel processing
- power consumption
- hardware implementation
- high speed
- power dissipation
- electrical properties
- transmission electron microscopy
- image sensor
- real time
- mixed signal
- random access memory
- neural network
- metal oxide