As Channel Double Gate Junctionless Transistor.
Bahniman GhoshNeelam SuranaM. W. AkramBall Mukund Mani TripathiPublished in: J. Low Power Electron. (2014)
Keyphrases
- field effect transistors
- high density
- steady state
- silicon dioxide
- multiple input
- mathematical analysis
- high speed
- leakage current
- multiple access
- neural network
- low power
- integrated circuit
- real time
- channel coding
- metal oxide semiconductor
- channel capacity
- liquid crystal displays
- cmos technology
- low complexity
- data sets