Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation.
Takeshi KadonoRyo HiroseAyumi Onaka-MasadaKoji KobayashiAkihiro SuzukiRyosuke OkuyamaYoshihiro KogaAtsuhiko FukuyamaKazunari KuritaPublished in: Sensors (2022)
Keyphrases
- image sensor
- cmos technology
- liquid crystal
- metal oxide semiconductor
- low power
- dynamic range
- video camera
- high speed
- image processing algorithms
- charge coupled device
- low cost
- digital camera
- imaging systems
- hardware and software
- single chip
- low voltage
- solid state
- chemical vapor deposition
- integrated circuit
- cmos image sensor
- electrical properties
- image processing
- thin film
- motion blur
- three dimensional
- high dynamic range
- high density
- power consumption
- real time
- analog to digital converter
- mixed signal
- moving objects
- high quality
- wide dynamic range