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Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics.
Takamasa Kawanago
Ryo Ikoma
Du Wanjing
Shunri Oda
Published in:
ESSDERC (2016)
Keyphrases
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gate dielectrics
electron beam
electrical properties
climbing robot
si sio
optimal solution
real time
real world
computer vision
multimedia
three dimensional
pattern recognition
image analysis
control system
data management