High Resolution Observation of Subsurface Defects at SiO2/4H-SiC Interfaces by Local Deep Level Transient Spectroscopy Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy.
Yuji YamagishiYasuo ChoPublished in: IRPS (2019)
Keyphrases
- high resolution
- low resolution
- super resolution
- image processing
- electrical properties
- steady state
- electron microscopy
- remote sensing
- silicon dioxide
- high frequency
- x ray
- field of view
- high quality
- magnetic resonance images
- hyperspectral
- image analysis
- image enhancement
- satellite images
- multispectral
- structured light
- high resolution images
- infrared
- high speed
- scanning devices