A 0.7-1.15GHz complementary common-gate LNA in 0.18μm SOI CMOS with +15dBm IIP3 and >1kV HBM ESD protection.
Barend van LiempdSaneaki AriumiEwout MartensShih-Hung ChenPiet WambacqJan CraninckxPublished in: ESSCIRC (2015)
Keyphrases
- metal oxide semiconductor
- silicon on insulator
- cmos technology
- high speed
- integrated circuit
- low cost
- low power
- power consumption
- electron beam
- transmission line
- image sensor
- gate dielectrics
- protection scheme
- low voltage
- nm technology
- frequency band
- analog vlsi
- real time
- intel xeon
- reactive power
- dual band
- power dissipation
- data protection
- circuit design