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U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory.

Ming-Hung WuMing-Chun HongChing ShihYao-Jen ChangYu-Chen HsinShih-Ching ChiuKuan-Ming ChenYi-Hui SuChih-Yao WangShan-Yi YangGuan-Long ChenHsin-Han LeeSk. Ziaur RahamanI-Jung WangChen-Yi ShihTsun-Chun ChangJeng-Hua WeiShyh-Shyuan SheuWei-Chung LoShih-Chieh ChangTuo-Hung Hou
Published in: VLSI Technology and Circuits (2023)
Keyphrases
  • high speed
  • high density
  • data analysis
  • design considerations
  • random access memory
  • sensor data
  • low voltage
  • close proximity
  • data sources
  • database
  • low cost
  • computer systems
  • low power
  • low density