Performance-optimized gate-first 22-nm SOI technology with embedded DRAM.
G. FreemanP. ChangE. R. EngbrechtK. J. GiewontD. F. HilscherM. LagusT. J. McArdleB. MorgenfeldShreesh NarasimhaJames P. NorumK. A. NummyPaul C. ParriesG. WangJonathan K. WinslowPaul D. AgnelloRajeev MalikPublished in: IBM J. Res. Dev. (2015)
Keyphrases
- cmos technology
- silicon on insulator
- metal oxide semiconductor
- embedded dram
- low power
- dynamic random access memory
- low cost
- integrated circuit
- power consumption
- parallel processing
- low voltage
- power dissipation
- nm technology
- high speed
- database systems
- image processing
- random access memory
- computer systems
- signal processing