Xintian Zhou

Publication Activity (10 Years)

Years Active: 2020-2023
Publications (10 Years): 19

Top Topics

Personality Traits

Simulation Study

Top Venues

Publications

Shiyu Zhang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu
Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. EITCE (2023)
Kang Zhang, Yu Wu, Dongqing Hu, Yunpeng Jia, Xintian Zhou
Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure. EITCE (2023)
Wangda Wang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu
A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers. EITCE (2022)
Yuefeng Wu, Yu Wu, Xintian Zhou, Feng Liu, Lei Zong
Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping. EITCE (2022)
Chongning Zhao, Dongqing Hu, Yuechao Zheng, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li
Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region. EITCE (2022)
Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. EITCE (2022)
Xingyu Fang, Yunpeng Jia, Xintian Zhou, Xinyu Li, Yingying Lei, Kai Zhao
A Novel Reverse-Conducting IGBT With Built-In Channel Diode. EITCE (2021)
Wanting Yang, Dongqing Hu, Xintian Zhou, Xinyu Li, Xingyu Fang, Kai Zhao
Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer. EITCE (2021)
Chen Gao, Yu Wu, Yueyang Liu, Xintian Zhou, Kesheng Wang, Zheng Zhong
Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping. EITCE (2021)
Kai Zhao, Yu Wu, Yueyang Liu, Xintian Zhou, Zhaomin Yao, Yingying Lei
The Reverse Recovery Characteristics of an Improved 3.3-kV CIBH Diode with Local Heavily Doped N++ Regions at the Cathode. EITCE (2021)
Yingying Lei, Yu Wu, Xintian Zhou, Meng Liu, Xinyu Li, Xingyu Fang, Kai Zhao, Zheng Zhong
Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET. EITCE (2021)
Jinpeng Zhou, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Yue Tan, Xinyu Li
Anti-total dose effect design of half-bridge driving chip. EITCE (2021)
Ting Li, Dongqing Hu, Yunpeng Jia, Xintian Zhou, Yu Wu
3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET. EITCE (2021)
Lihao Wang, Xintian Zhou, Feng Liu, Lei Zhang, Yu Wu, Xinyu Li
High voltage CIBH diodes with new structure on the cathode side of the edge. EITCE (2021)
Xinyu Li, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Xingyu Fang, Zhonghan Deng
Study on The Degradations Produced by Different P-base Diffusion Temperatures on SGT MOSFET With Approximate Threshold Voltage. EITCE (2021)
Meng Liu, Yu Wu, Xintian Zhou, Jie Cao, Lei Sun, Lihao Wang
Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode. EITCE (2020)
Lei Sun, Dongqing Hu, Xintian Zhou, Meng Liu, Jie Cao
Electrical Parameters Degradation of E-mode GaN Under Repeated Short-Circuit Impacts. EITCE (2020)
Jie Cao, Yu Wu, Yueyang Liu, Xintian Zhou, Lihao Wang, Meng Liu, Lei Sun
The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode. EITCE (2020)
Yue Tan, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Fujie Zhao, Xinyu Li, Jinpeng Zhou
Architecture-level Radiation-Hardened design applied to halfbridge GaN driver. EITCE (2020)