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Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure.

Kang ZhangYu WuDongqing HuYunpeng JiaXintian Zhou
Published in: EITCE (2023)
Keyphrases
  • databases
  • real time
  • significant improvement
  • computer simulation
  • genetic algorithm
  • multiscale
  • search algorithm
  • multiresolution
  • hidden markov models
  • probabilistic model
  • data fusion
  • tree structure
  • graph structure