Login / Signup

Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection.

Yuechao ZhengDongqing HuChongning ZhaoYunpeng JiaXintian ZhouYu WuTing Li
Published in: EITCE (2022)
Keyphrases
  • simulation study
  • monte carlo
  • real world
  • real time
  • information retrieval
  • expert systems
  • graduate students
  • data mining
  • clustering algorithm
  • case study