Toshiharu Watanabe

Publication Activity (10 Years)

Years Active: 1995-2009
Publications (10 Years): 0

Publications

Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Teruhiko Kamei, Hiroaki Nasu, Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko, Masahide Matsumoto, Toshihiko Himeno, Toshifumi Hashimoto, Yi-Ching Liu, Hardwell Chibvongodze, Takamitsu Hori, Manabu Sakai, Hong Ding, Yoshiharu Takeuchi, Hitoshi Shiga, Norifumi Kajimura, Yasuyuki Kajitani, Kiyofumi Sakurai, Kosuke Yanagidaira, Toshihiro Suzuki, Yuko Namiki, Tomofumi Fujimura, Man Mui, Hao Nguyen, Seungpil Lee, Alex Mak, Jeffery Lutze, Tooru Maruyama, Toshiharu Watanabe, Takahiko Hara, Shigeo Ohshima
A 113mm2 32Gb 3b/cell NAND flash memory. ISSCC (2009)
Takahiko Hara, Koichi Fukuda, Kazuhisa Kanazawa, Noboru Shibata, Koji Hosono, Hiroshi Maejima, Michio Nakagawa, Takumi Abe, Masatsugu Kojima, Masaki Fujiu, Yoshiaki Takeuchi, Kazumi Amemiya, Midori Morooka, Teruhiko Kamei, Hiroaki Nasu, Chi-Ming Wang, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Tohru Maruyama, Susumu Yoshikawa, Masaaki Higashitani, Tuan D. Pham, Yupin Fong, Toshiharu Watanabe
8-gb multi-level NAND flash memory with 70-nm CMOS technology. IEEE J. Solid State Circuits 41 (1) (2006)
Kazuaki Aoki, Toshiharu Watanabe, Mineichi Kudo
Design of decision trees using class-dependent feature subsets. Systems and Computers in Japan 36 (4) (2005)
Shigeru Atsumi, Akira Umezawa, Tooru Tanzawa, Tadayuki Taura, Hitoshi Shiga, Yoshinori Takano, Takeshi Miyaba, Michiharu Matsui, Hiroshi Watanabe, Kazuaki Isobe, Shota Kitamura, Seiji Yamada, Masanobu Saito, Seiichi Mori, Toshiharu Watanabe
A channel-erasing 1.8-V-only 32-Mb NOR flash EEPROM with a bitline direct sensing scheme. IEEE J. Solid State Circuits 35 (11) (2000)
Syozo Yasui, Toshiharu Watanabe, Hideaki Fujimura
Connectionist Abstraction for Machine Learning by Analogy. ICONIP (1998)
Yoshihisa Iwata, Ken-ichi Imamiya, Yoshihisa Sugiura, Hiroshi Nakamura, Hideko Oodaira, Masaki Momodomi, Yasuo Itoh, Toshiharu Watanabe, Hitoshi Araki, Kazuhito Narita, Kazunori Masuda, Junichi Miyamoto
A 35 ns cycle time 3.3 V only 32 Mb NAND flash EEPROM. IEEE J. Solid State Circuits 30 (11) (1995)