Razali Ismail

Publication Activity (10 Years)

Years Active: 1990-2014
Publications (10 Years): 0

Top Topics

Analytical Models

Schottky Barrier

Field Effect Transistors

Simulation Models

Top Venues

Microelectron. Reliab.

Publications

M. Saeidmanesh, Meisam Rahmani, H. Karimi Feiz Karimi, M. Khaledian, Razali Ismail
Analytical model for threshold voltage of double gate bilayer graphene field effect transistors. Microelectron. Reliab. 54 (1) (2014)
Fatimah Hamid, Razali Ismail
Simulation of Trigate FET with Semi-Cylindrical Channel to Reduce Corner Effect. UKSim (2013)
Desmond Chang Yih Chek, Michael L. P. Tan, Mohammad Taghi Ahmadi, Razali Ismail, Vijay K. Arora
Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor. Microelectron. J. 41 (9) (2010)
Munawar Agnus Riyadi, Ismail Saad, Razali Ismail
Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-based vertical double gate MOSFET. Microelectron. J. 41 (12) (2010)
Jatmiko E. Suseno, Muhammad Taghi Ahmad, Munawar Agus Riyadi, Razali Ismail
Extraction of SPICE Model for Double Gate Vertical MOSFET. Asia International Conference on Modelling and Simulation (2009)
Munawar Agus Riyadi, Mohammad Taghi Ahmadi, Jatmiko E. Suseno, Kang Eng Siew, Ismail Saad, Razali Ismail, Vijay K. Arora
Physics-Based Simulation of Carrier Velocity in 2-Dimensional P-Type MOSFET. Asia International Conference on Modelling and Simulation (2009)
Ismail Saad, Michael L. P. Tan, Ing Hui Hii, Razali Ismail, Vijay K. Arora
Ballistic mobility and saturation velocity in low-dimensional nanostructures. Microelectron. J. 40 (3) (2009)
Ismail Saad, Michael L. P. Tan, Aaron C. E. Lee, Razali Ismail, Vijay K. Arora
Scattering-limited and ballistic transport in a nano-CMOS circuit. Microelectron. J. 40 (3) (2009)
Ismail Saad, Razak M. A. Lee, Razali Ismail, Vijay K. Arora
Physics-Based Modelling of Ballistic Transport in Nanoscale Transistor. Asia International Conference on Modelling and Simulation (2009)
Mohammad Taghi Ahmadi, Hui Houg Lau, Razali Ismail, Vijay K. Arora
Current-voltage characteristics of a silicon nanowire transistor. Microelectron. J. 40 (3) (2009)
Mohammad Taghi Ahmadi, Ismail Saad, Razali Ismail, Vijay K. Arora
The Ultimate Drift Velocity in Two Dimensional Quantum Limit. Asia International Conference on Modelling and Simulation (2008)
Ismail Saad, Razali Ismail
Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method. Microelectron. J. 39 (12) (2008)
Razali Ismail, Gehan A. J. Amaratunga
Adaptive meshing schemes for simulating dopant diffusion. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 9 (3) (1990)