Moufu Kong

Publication Activity (10 Years)

Years Active: 2021-2024
Publications (10 Years): 9

Top Topics

Improved Algorithm

Computer Simulation

Schottky Barrier

Top Venues

Microelectron. J.

Publications

Moufu Kong, Hongfei Deng, Yingzhi Luo, Jiayan Zhu, Bo Yi, Hongqiang Yang, Qiang Hu, Fanxin Meng
Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques. Microelectron. J. 150 (2024)
Zhaoyu Ai, Haiyun Liu, Xinyang Chen, Jing Feng, Yuxi Zhou, Moufu Kong
A Novel Semi-superjunction SiC Trench MOSFET with Ultra-low Specific On-resistance. ASICON (2023)
Moufu Kong, Zhi Lin, Hongfei Deng, Bo Yi, Rui Jin, Hongqiang Yang
A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance. ASICON (2023)
Moufu Kong, Ke Huang, Ronghe Yan, Bo Yi, Bingke Zhang, Hongqiang Yang
A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance. ASICON (2023)
Moufu Kong, Zeyu Cheng, Ning Yu, Rui Jin, Jiaxin Guo, Hongqiang Yang
An Ultra-low Specific On-resistance SiC LDMOS Using Double RESURF and Field Plate Techniques. ASICON (2023)
Bo Yi, Zheng Wu, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang
A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp. ASICON (2021)
Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi
A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances. ASICON (2021)
Moufu Kong, Ke Huang, Bin Wang, Cong Liu, Bo Yi, Hongqiang Yang
A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance. ASICON (2021)
Moufu Kong, Zewei Hu, Jiacheng Gao, Zongqi Chen, Jiaxin Guo, Sadaf Ali Nafees, Bo Yi, Hongqiang Yang
A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics. ASICON (2021)