Haimeng Huang

Publication Activity (10 Years)

Years Active: 2011-2023
Publications (10 Years): 9

Top Topics

Analytical Models

Numerical Calculation

Top Venues

IEICE Electron. Express

Microelectron. J.

Publications

Zonghao Zhang, Xi Wang, Keqiang Ma, Siliang Wang, Chenxing Wang, Haoyang Zhou, Haimeng Huang, Junji Cheng, Bo Yi, Hongqiang Yang
Temperature Dependent Optimization for Specific On-Resistance for 900 V Superjunction MOSFETs: Numerical Calculation and Comparison. ASICON (2023)
Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, MouFu Kong, Hongqiang Yang
design. Microelectron. J. 139 (2023)
Bo Yi, Haimeng Huang, Haoran Hu, MouFu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang
Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. ASICON (2023)
Bo Yi, Zheng Wu, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang
A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp. ASICON (2021)
Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi
A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances. ASICON (2021)
Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang
Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. IEICE Electron. Express 17 (2) (2020)
Junji Cheng, Jingjie Lin, Weizhen Chen, Shiying Wu, Haimeng Huang, Bo Yi
Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance. IEEE Access 8 (2020)
Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, MouFu Kong
electric field shield. IEICE Electron. Express 16 (5) (2019)
Haimeng Huang, Jun Huang, Huan Hu, Junji Cheng, Bo Yi
Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices. IEEE Access 7 (2019)
Haimeng Huang, Yongwei Wang, Xingbi Chen
An analytical model for SOI triple RESURF devices. ASICON (2011)