MouFu Kong

Publication Activity (10 Years)

Years Active: 2019-2023
Publications (10 Years): 7

Top Topics

Simulation Study

Top Venues

IEICE Electron. Express

Microelectron. J.

Publications

Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, MouFu Kong, Hongqiang Yang
design. Microelectron. J. 139 (2023)
Bo Yi, Haimeng Huang, Haoran Hu, MouFu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang
Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. ASICON (2023)
Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang
Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. IEICE Electron. Express 17 (2) (2020)
Rongxin Chen, Bo Yi, MouFu Kong, Xingbi Chen
Simulation Study of Trench IGBT with Diode-Clamped P-Well for High dI/dt and dV/dt Controllability. ASICON (2019)
Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, MouFu Kong
electric field shield. IEICE Electron. Express 16 (5) (2019)
Jun Huang, MouFu Kong, Xingbi Chen
A Low On-state Voltage and Large Current Capability Thin SOI-LIGBT with Trench NMOS. ASICON (2019)
Cong Liu, MouFu Kong, Hanzhi Chen, Bo Yi, Bingke Zhang, Xingbi Chen
Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes. ASICON (2019)