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A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance.

Moufu KongZhi LinHongfei DengBo YiRui JinHongqiang Yang
Published in: ASICON (2023)
Keyphrases
  • schottky barrier
  • real world
  • improved algorithm
  • field effect transistors
  • neural network
  • genetic algorithm
  • website
  • training set
  • low cost
  • computer simulation
  • cost effective