Reliability assessment of voltage controlled oscillators in 32nm high-κ metal gate technology.
Florian ChouardMichael FuldeDoris Schmitt-LandsiedelPublished in: ESSCIRC (2010)
Keyphrases
- field effect transistors
- reliability assessment
- cmos technology
- low voltage
- power system
- metal oxide
- steady state
- high density
- nm technology
- metal oxide semiconductor
- mathematical analysis
- wide range
- low power
- bp neural network model
- rapid development
- key technologies
- artificial intelligence
- parallel processing
- infrared
- markov chain
- data processing
- low cost
- case study
- power consumption
- cost effective