Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology.
K. W. AltR. E. YeatsC. P. HutchinsonD. K. KuhnT. S. LowM. IwamotoM. E. AdamskiR. L. ShimonTimothy E. ShirleyM. BonseF. G. KellertD. C. D'AvanzoPublished in: Microelectron. Reliab. (2007)
Keyphrases
- field effect transistors
- failure rate
- steady state
- high density
- mathematical analysis
- high speed
- case study
- root cause
- study proposes
- cost effective
- rapid development
- key technologies
- positive and negative
- computer systems
- data processing
- learning algorithm
- data sets
- personal computer
- integrated circuit
- low cost
- technological advances
- circuit design
- information technology
- failure detection