Asynchronous 1R-1W dual-port SRAM by using single-port SRAM in 28nm UTBB-FDSOI technology.

Harsh Rawat K. Bharath Alexander Fell

Published in: SoCC (2017)

Keyphrases

cmos technology
power consumption
data transmission
embedded dram
random access memory
dynamic random access memory
low power
leakage current
case study
rapid development
nm technology
power reduction
cost effective
data processing
search algorithm
data sets
power management
metal oxide semiconductor