Four-Valued Memory Circuit Designed by Multiple-Peak MOS-NDR Devices and Circuits.
Dong-Shong LiangKwang-Jow GanLong-Xian SuChi-Pin ChenChung-Chih HsiaoCher-Shiung TsaiYaw-Hwang ChenShih-Yu WangShun-Huo KuoFeng-Chang ChiangPublished in: IWSOC (2005)
Keyphrases
- high speed
- power reduction
- analog circuits
- power dissipation
- delay insensitive
- digital circuits
- electronic circuits
- mobile devices
- flip flops
- analog vlsi
- tunnel diode
- floating gate
- logic synthesis
- circuit design
- power consumption
- shift register
- data sets
- low voltage
- logic circuits
- memory size
- embedded systems
- vlsi circuits
- main memory