generation embedded DRAM with 4X lower self refresh power in 22nm Tri-Gate CMOS technology.
Mesut MeterelliyozFuad H. Al-amoodyUmut ArslanFatih HamzaogluLuke HoodManoj B. LalJeffrey L. MillerAnand RamasundarDan SoltmanIfar WanYih WangKevin ZhangPublished in: VLSIC (2014)