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Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current.
Luqiao Yin
Shuang Wu
Kailin Ren
Wenkui Zhang
Jianhua Zhang
Published in:
Microelectron. J. (2024)
Keyphrases
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real time
leakage current
silicon dioxide
low cost
low voltage
situational awareness
monitoring system
complex event processing
vision system
multiple input
activity monitoring
data acquisition
field effect transistors
image processing
high speed
high temperature