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A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI.

Fukashi MorishitaHideyuki NodaIsamu HayashiTakayuki GyohtenMako OkamotoTakashi IpposhiShigeto MaegawaKatsumi DosakaKazutami Arimoto
Published in: IEICE Trans. Electron. (2007)
Keyphrases
  • random access memory
  • design considerations
  • high speed
  • low voltage
  • integrated circuit
  • low power
  • flash memory
  • low cost
  • power dissipation