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A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs.
Hongxia Liu
Yue Hao
Jiangang Zhu
Published in:
Microelectron. Reliab. (2002)
Keyphrases
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leakage current
low voltage
field effect transistors
power line
design considerations
multi channel
cmos technology
steady state
power management
electrical properties
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silicon dioxide
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