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Fabrication and characterization of 100-nm wide silicon nanocantilevers using top-down approach.
Samuel Guillon
Daisuke Saya
Laurent Mazenq
Liviu Nicu
Sorin Perisanu
Pascal Vincent
Published in:
NEMS (2011)
Keyphrases
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silicon on insulator
high density
transmission electron microscopy
plasma etching
high speed
cmos technology
thin film transistor
semiconductor devices
integrated circuit
metal oxide semiconductor
high level
ibm power processor
wide range
genetic algorithm
low density
multiscale
x ray
data mining
real world
real time