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An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process.
Jaewon Park
Jae Hoon Lee
Sang-Kil Park
Ki Chul Chun
Kyomin Sohn
Sungho Kang
Published in:
IEEE Access (2021)
Keyphrases
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dynamic random access memory
main memory
high density
low voltage
memory subsystem
face recognition
high speed
database management systems
development process
database
case study
training data
input output