Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited).
Tetsuo NaritaDaigo KikutaKenji ItoTomoyuki ShojiTomohiko MoriSatoshi YamaguchiYasuji KimotoKazuyoshi TomitaMasakazu KanechikaTakeshi KondoTsutomu UesugiJun KojimaJun SudaYoshitaka NagasatoSatoshi IkedaHiroki WatanabeMasayoshi KosakiTohru OkaPublished in: IRPS (2023)