A 210-MHz 4.23 fJ Energy/Bit 1-kb Asymmetrical Schmitt-Trigger-Based SRAM Using 40-nm CMOS Process.
Ralph Gerard B. SangalangShiva ReddyLean Karlo S. TolentinoYou-Wei ShenOliver Lexter July A. JoseChua-Chin WangPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2023)
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