Ultra low power offering 14 nm bulk double gate FinFET based SRAM cells.
Damodhar Rao M.Y. V. NarayanaV. V. K. D. V. PrasadPublished in: Sustain. Comput. Informatics Syst. (2022)
Keyphrases
- low power
- ultra low power
- cmos technology
- leakage current
- power consumption
- nm technology
- low voltage
- low cost
- high speed
- single chip
- electrical properties
- image sensor
- visual cortex
- power dissipation
- low power consumption
- embedded dram
- silicon on insulator
- neural network
- power reduction
- power management
- microscope images
- silicon dioxide
- cell lines
- random access memory
- image analysis