Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of Tunneling Oxide.
Pei-Ci JhangChi-Pin LuJung-Yu ShiehLing-Wu YangTahone YangKuang-Chao ChenHang-Ting LuePei-Ying DuChih-Yuan LuPublished in: IRPS (2024)
Keyphrases
- flash memory
- metal oxide
- solid state
- garbage collection
- buffer management
- disk drives
- file system
- random access
- embedded systems
- main memory
- database systems
- data storage
- storage devices
- b tree
- x ray
- storage systems
- electron microscopy
- high speed
- data structure
- small size
- relational databases
- similarity measure
- hand held devices
- databases