Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures.
Stephen A. ManciniSeung Yup JangZeyu ChenDongyoung KimJustin LynchYafei LiuBalaji RaghothamacharMinseok KangAnant AgarwalNadeemullah MahadikRobert StahlbushMichael DudleyWoongje SungPublished in: IRPS (2022)