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AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate.
Sanghyun Seo
Kaustav Ghose
Guangyuan Zhao
Dimitris Pavlidis
Published in:
IEICE Trans. Electron. (2008)
Keyphrases
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field effect transistors
semiconductor devices
high density
steady state
mathematical analysis
schottky barrier
magnetic recording
high temperature
structuring elements
chip design
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