A 3×40Gb/s 28nm FDSOI CMOS front-end array with 10mVPP sensitivity and >4VPP output swing.
Stefan ShopovSorin P. VoinigescuPublished in: ESSCIRC (2015)
Keyphrases
- high speed
- focal plane
- back end
- image sensor
- metal oxide semiconductor
- random access memory
- nm technology
- metal oxide
- sensitivity analysis
- silicon on insulator
- low power
- cmos technology
- low cost
- charge coupled devices
- feedback loop
- power supply
- power consumption
- data structure
- high sensitivity
- analog vlsi
- transmission electron microscopy
- charge coupled device
- infrared
- input data