Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology.
Yannick Rey-TauriacO. de SagazanM. TaurinOlivier BonnaudPublished in: Microelectron. Reliab. (2003)
Keyphrases
- cmos technology
- low power
- metal oxide semiconductor
- power consumption
- circuit design
- high density
- high speed
- field effect transistors
- low cost
- cost effective
- integrated circuit
- significant improvement
- power supply
- database
- parallel processing
- technological advances
- data processing
- key technologies
- vlsi circuits
- nm technology
- low voltage
- computational efficiency
- e government
- case study