1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.
Sheng-Lei ZhaoJincheng ZhangYachao ZhangLansheng FengShuang LiuXiufeng SongYixin YaoJun LuoZhihong LiuShengrui XuYue HaoPublished in: Sci. China Inf. Sci. (2023)